may 2006 ? 2006 fairchild semiconductor corporation FDMA1032CZ rev b (w) FDMA1032CZ 20v complementary powertrench ? mosfet general description this device is designed specif ically as a single package solution for a dc/dc 'switching' mosfet in cellular handset and other ultra-portable applications. it features an independent n-channel & p-channel mosfet with low on-state resistance for minimum conduction losses. the gate charge of each mosfet is also minimized to allow high frequency switching directly from the controlling device. the microfet 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications. features ? q1: n-channel 3.7 a, 20v. r ds(on) = 68 m ? @ v gs = 4.5v r ds(on) = 86 m ? @ v gs = 2.5v ? q2: p-channel ?3.1 a, ?20v. r ds(on) = 95 m ? @ v gs = ?4.5v r ds(on) = 141 m ? @ v gs = ?2.5v ? low profile ? 0.8 mm maximum ? in the new package microfet 2x2 mm ? rohs compliant 3 2 1 4 5 6 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter q1 q2 units v ds drain-source voltage 20 ?20 v v gs gate-source voltage 12 12 v drain current ? continuous (note 1a) 3.7 ?3.1 i d ? pulsed 6 ?6 a power dissipation for single operation (note 1a) 1.4 p d (note 1b) 0.7 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 86 (single operation) r ja thermal resistance, junction-to-ambient (note 1b) 173 (single operation) r ja thermal resistance, junction-to-ambient (note 1c) 69 (dual operation) r ja thermal resistance, junction-to-ambient (note 1d) 151 (dual operation) c/w package marking and ordering information device marking device reel size tape width quantity 032 FDMA1032CZ 7?? 8mm 3000 units FDMA1032CZ 20v complementary powertrench ? mosfet microfet 2x2 s1 g1 d1 s2 g2 d2 pin 1 s1 g1 d2 d1 g2 s2 d1 d2
FDMA1032CZ rev b (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a v gs = 0 v, i d = ?250 a q1 q2 20 ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c i d = ?250 a, referenced to 25 c q1 q2 15 ?12 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v v ds = ?16 v, v gs = 0 v q1 q2 1 ?1 a i gss gate-body leakage v gs = 12 v, v ds = 0 v all 10 a on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a v ds = v gs , i d = ?250 a q1 q2 0.6 ?0.6 1.0 ?1.0 1.5 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c i d = ?250 a, referenced to 25 c q1 q2 ?4 4 mv/ c v gs = 4.5 v, i d = 3.7 a v gs = 2.5 v, i d = 3.3 a v gs = 4.5 v, i d = 3.7 a, t j = 125 c q1 37 50 53 68 86 90 m ? r ds(on) static drain-source on-resistance v gs = ?4.5v, i d = ?3.1 a v gs = ?2.5 v, i d = ?2.5 a v gs = ?4.5 v, i d = ?3.1 a,t j = 125 c q2 60 88 87 95 141 140 m ? g fs forward transconductance v ds = 10 v, i d = 3.7 a v ds = ?10 v, i d = ?3.1 a q1 q2 16 ?11 s dynamic characteristics c iss input capacitance q1 q2 340 540 pf c oss output capacitance q1 q2 80 120 pf c rss reverse transfer capacitance q1 v ds = 10 v, v gs = 0 v, f = 1.0 mhz q2 v ds = ?10 v, v gs = 0 v, f = 1.0 mhz q1 q2 60 100 pf FDMA1032CZ 20v complementary powertrench ? mosfet
FDMA1032CZ rev b (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units switching characteristics (note 2) t d(on) turn-on delay time q1 q2 8 13 16 24 ns t r turn-on rise time q1 q2 8 11 16 20 ns t d(off) turn-off delay time q1 q2 14 37 26 59 ns t f turn-off fall time q1 v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 ? q2 v dd = ?10 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? q1 q2 3 36 6 58 ns q g total gate charge q1 q2 4 7 6 10 nc q gs gate-source charge q1 q2 0.7 1.1 nc q gd gate-drain charge q1 v ds = 10 v, i d = 3.7 a, v gs = 4.5 v q2 v ds = ?10 v,i d =? 3.1 a, v gs =? 4.5 v q1 q2 1.1 2.4 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current q1 q2 1.1 ?1.1 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.1 a (note 2) v gs = 0 v, i s = ?1.1 a (note 2) q1 q2 0.7 ?0.8 1.2 ?1.2 v t rr diode reverse recovery time q1 q2 11 25 ns q rr diode reverse recovery charge q1 i f = 3.7 a, di f /dt = 100 a/s q2 i f = ?3.1 a, di f /dt = 100 a/s q1 q2 2 9 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad of 2 oz. copper on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. (a) r ja = 86c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5? x 1.5? x 0.062? thick pcb (b) r ja = 173c/w when mounted on a minimum pad of 2 oz copper (c) r ja = 69c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5? x 1.5? x 0.062? thick pcb (d) r ja = 151c/w when mounted on a minimum pad of 2 oz copper a) 86 o c/w when mounted on a 1in 2 pad of 2 oz copper b) 173 o c/w when mounted on a minimum pad of 2 oz copper scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDMA1032CZ 20v complementary powertrench ? mosfet
FDMA1032CZ rev b (w) typical characteristics q1 (n-channel) 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 v ds , drain-source voltage (v) i d , drain current (a) 2.5v 2.0v v gs = 4.5v 3.0v 3.5v 1.5v 0.8 1 1.2 1.4 1.6 1.8 2 0123456 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.0v 2.5v 3.5v 4.5v 3.0v 4.0v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 3.7a v gs = 4.5v 0.03 0.05 0.07 0.09 0.11 0.13 0246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 1.85a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 1 2 3 4 5 6 0.511.522.5 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDMA1032CZ 20v com p lementar y powertrench ? mosfet
FDMA1032CZ rev b (w) typical characteristics q1 (n-channel) 0 2 4 6 8 10 0246810 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 3.7a v ds = 5v 10v 15v 0 100 200 300 400 500 0 5 10 15 20 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = 4.5v single pulse r ja = 173c/w t a = 25c 10ms 1ms 100us 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 173c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja =173 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal charac terization performed us ing the conditions desc ribed in note 1b. transient th ermal response will change depe nding on the circuit board design. fdma1 03 2 c z 2 0 v co m p l e m e n ta r y p o w e rtr e n c h ? m os fet
FDMA1032CZ rev b (w) typical characteristics: q2 (p-channel) 0 1 2 3 4 5 6 0 0.4 0.8 1.2 1.6 2 -v ds , drain-source voltage (v) -i d , drain current (a) 3.0v 2.5v 3.5v v gs = 45v 2.0v 1.5v 0.6 1 1.4 1.8 2.2 2.6 0123456 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.0v -3.5v -4.5v -3.0v -2.5v -4.0v figure 12. on-region characteristics. fi gure 13. on-resistance variation with drain current and gate voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -3.1a v gs = -4.5v 0.04 0.08 0.12 0.16 0.2 0246810 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -1.55a t a = 125 o c t a = 25 o c figure 14. on-resistance variation with temperature. figure 15. on-resistance variation with gate-to-source voltage. 0 1 2 3 4 5 6 00.511.522.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 16. transfer characteristics. figure 17. body diode forward voltage variation with source current and temperature. fdma1 03 2 c z 2 0 v co m p l e m e n ta r y p o w e rtr e n c h ? m os fet
FDMA1032CZ rev b (w) typical characteristics: q2 (p-channel) 0 2 4 6 8 10 0 2 4 6 8 101214 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -3.1a v ds = -5v -15v -10v 0 200 400 600 800 1000 0 4 8 12 16 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 18. gate charge characteristics. figure 19. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = -4.5v single pulse r ja = 173 o c/w t a = 25 o c 10ms 1ms 100us 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 173c/w t a = 25c figure 20. maximum safe operating ar ea. figure 21. single pulse maximum power dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja =173 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 22. transient thermal response curve. thermal characterization performed using the conditions described in n ote 1c. transient thermal re sponse will change dependi ng on the circuit board design. fdma1 03 2 c z 2 0 v co m p l e m e n ta r y p o w e rtr e n c h ? m os fet
FDMA1032CZ rev b (w) FDMA1032CZ 20v complementary powertrench ? mosfet
rev. i19 trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for us e as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause t he failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specif ications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without not ice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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